Author Affiliations
Abstract
1 Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
2 State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
3 Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering (IAPME), University of Macau, Macau, China
4 School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, China
5 State Key Laboratory of Applied Optics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
6 Department of Materials Science and Engineering, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
High-performance infrared (IR) photodetectors made by low dimensional materials promise a wide range of applications in communication, security and biomedicine. Moreover, light-harvesting effects based on novel plasmonic materials and their combinations with two-dimensional (2D) materials have raised tremendous interest in recent years, as they may potentially help the device complement or surpass currently commercialized IR photodetectors. Graphene is a particularly attractive plasmonic material because graphene plasmons are electrically tunable with a high degree of electromagnetic confinement in the mid-infrared (mid-IR) to terahertz regime and the field concentration can be further enhanced by forming nanostructures. Here, we report an efficient mid-IR room-temperature photodetector enhanced by plasmonic effect in graphene nanoresonators (GNRs)/graphene heterostructure. The plasmon polaritons in GNRs are size-dependent with strong field localization. Considering that the size and density of GNRs are controllable by chemical vapor deposition method, our work opens a cost-effective and scalable pathway to fabricate efficient IR optoelectronic devices with wavelength tunability.
Journal of Semiconductors
2020, 41(7): 072907
Author Affiliations
Abstract
1 Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
2 Department of Materials Science and Engineering, Monash University, Clayton 3800, Australia
Black phosphorus (BP) is a promising material for ultrafast and broadband photodetection because of its narrow bandgap from 0.35 eV (bulk) to 1.8 eV (monolayer) and high carrier mobility. Although photodetectors based on BP with different configurations have been reported, high photosensitivity was mostly observed in the visible range. A highly efficient BP-based infrared photodetector operated in the telecom spectral range, especially at 1550 nm, has not been demonstrated. Here, we report a Schottky-type photodetector based on thin BP flakes, operating in a broad spectral range from visible (635 nm) to infrared (1550 nm). A responsivity as high as 230 A·W 1 was achieved at 1550 nm with a source-drain bias of 1 V. The rise time is 4.8 ms, and the fall time is 6.8 ms. Under light illumination and external bias, the Schottky barrier between the BP and metal was reduced, leading to efficient photocurrent extraction. The unprecedented performance of the BP photodetector indicates intriguing potential for sensing, imaging, and optical communication.
040.5160 Photodetectors 160.1890 Detector materials 
Chinese Optics Letters
2018, 16(2): 020002

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